IPB095N20NM6ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: IPB095N20NM6ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 62A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 186µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 4.18 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
1000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IPB095N20NM6ATMA1 Infineon Technologies
Description: INFINEON - IPB095N20NM6ATMA1 - Leistungs-MOSFET, n-Kanal, 200 V, 116 A, 8700 µohm, TO-263 (D2PAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 200V, rohsCompliant: YES, Dauer-Drainstrom Id: 116A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 4.5V, Verlustleistung: 300W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: TO-263 (D2PAK), Anzahl der Pins: 3Pin(s), Produktpalette: OptiMOS 6 Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 15V, Drain-Source-Durchgangswiderstand: 8700µohm.
Weitere Produktangebote IPB095N20NM6ATMA1 nach Preis ab 4.66 EUR bis 12.17 EUR
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IPB095N20NM6ATMA1 | Infineon Technologies |
Description: IPB095N20NM6ATMA1 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 116A (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 62A, 15V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 186µA Supplier Device Package: PG-TO263-3-U01 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB095N20NM6ATMA1 | Infineon Technologies |
MOSFETs OptiMOS 6 Power-Transistor, 200 V |
auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPB095N20NM6ATMA1 |
|
Hersteller: Infineon Technologies
Description: IPB095N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 62A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 186µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
Description: IPB095N20NM6ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 62A, 15V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 186µA
Supplier Device Package: PG-TO263-3-U01
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.14 EUR |
| 10+ | 7.45 EUR |
| 50+ | 5.87 EUR |
| 100+ | 5.36 EUR |
| 500+ | 4.91 EUR |
| IPB095N20NM6ATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs OptiMOS 6 Power-Transistor, 200 V
MOSFETs OptiMOS 6 Power-Transistor, 200 V
auf Bestellung 56 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.17 EUR |
| 10+ | 7.08 EUR |
| 100+ | 5.87 EUR |
| 500+ | 5.21 EUR |
| 1000+ | 4.69 EUR |
| 2000+ | 4.66 EUR |