Technische Details IPB120N06S4-02 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Case: PG-TO263-3, On-state resistance: 2.4mΩ, Mounting: SMD, Gate charge: 150nC, Kind of channel: enhancement, Power dissipation: 188W, Technology: OptiMOS™ T2, Drain current: 120A, Gate-source voltage: ±20V.
Weitere Produktangebote IPB120N06S4-02
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IPB120N06S402ATMA2 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Case: PG-TO263-3 On-state resistance: 2.4mΩ Mounting: SMD Gate charge: 150nC Kind of channel: enhancement Power dissipation: 188W Technology: OptiMOS™ T2 Drain current: 120A Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPB120N06S402ATMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Case: PG-TO263-3
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
Power dissipation: 188W
Technology: OptiMOS™ T2
Drain current: 120A
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 60V; 120A; 188W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Case: PG-TO263-3
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
Power dissipation: 188W
Technology: OptiMOS™ T2
Drain current: 120A
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH