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IPB140N08S404ATMA1 Infineon Technologies


IPB140N08S4-04-Data-Sheet-10-Infineon.pdf
Hersteller: Infineon Technologies
MOSFETs N-CHANNEL 75/80V
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Technische Details IPB140N08S404ATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 140A TO263-7, Qualification: AEC-Q101, Grade: Automotive, Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO263-7-3, Vgs(th) (Max) @ Id: 4V @ 100µA, Power Dissipation (Max): 161W (Tc).

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IPB140N08S404ATMA1 IPB140N08S404ATMA1 Infineon Technologies IPB140N08S4-04-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e40147ed659561055b Description: MOSFET N-CH 80V 140A TO263-7
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 161W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB140N08S404ATMA1 IPB140N08S4-04-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e40147ed659561055b
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 140A TO263-7
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 161W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH