IPB180N03S4L01ATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 180A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 140µA, Supplier Device Package: PG-TO263-7-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.