IPB180N04S4-H0 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8 EUR |
| 10+ | 5.24 EUR |
| 100+ | 3.92 EUR |
| 500+ | 3.28 EUR |
| 1000+ | 2.83 EUR |
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Lieferzeit:
10-14 Tag (e)
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Technische Details IPB180N04S4-H0 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W, Type of transistor: N-MOSFET, On-state resistance: 1.1mΩ, Mounting: SMD, Power dissipation: 250W, Gate charge: 173nC, Polarisation: unipolar, Technology: OptiMOS™ T2, Drain current: 180A, Kind of channel: enhancement, Drain-source voltage: 40V, Gate-source voltage: ±20V, Case: PG-TO263-7.
Weitere Produktangebote IPB180N04S4-H0
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IPB180N04S4H0ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W Type of transistor: N-MOSFET On-state resistance: 1.1mΩ Mounting: SMD Power dissipation: 250W Gate charge: 173nC Polarisation: unipolar Technology: OptiMOS™ T2 Drain current: 180A Kind of channel: enhancement Drain-source voltage: 40V Gate-source voltage: ±20V Case: PG-TO263-7 |
auf Bestellung 910 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPB180N04S4H0ATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
Type of transistor: N-MOSFET
On-state resistance: 1.1mΩ
Mounting: SMD
Power dissipation: 250W
Gate charge: 173nC
Polarisation: unipolar
Technology: OptiMOS™ T2
Drain current: 180A
Kind of channel: enhancement
Drain-source voltage: 40V
Gate-source voltage: ±20V
Case: PG-TO263-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 180A; 250W
Type of transistor: N-MOSFET
On-state resistance: 1.1mΩ
Mounting: SMD
Power dissipation: 250W
Gate charge: 173nC
Polarisation: unipolar
Technology: OptiMOS™ T2
Drain current: 180A
Kind of channel: enhancement
Drain-source voltage: 40V
Gate-source voltage: ±20V
Case: PG-TO263-7
auf Bestellung 910 Stücke:
Lieferzeit 14-21 Tag (e)



