IPB180P04P403ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET P-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101
| Anzahl | Preis |
|---|---|
| 210+ | 2.55 EUR |
| 500+ | 2.34 EUR |
| 1000+ | 2.12 EUR |
| 10000+ | 1.93 EUR |
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Technische Details IPB180P04P403ATMA1 Infineon Technologies
Description: MOSFET P-CH 40V 180A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 410µA, Supplier Device Package: PG-TO263-7-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPB180P04P403ATMA1 nach Preis ab 2.12 EUR bis 2.55 EUR
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IPB180P04P403ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET P-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 8690 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB180P04P403ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 40V 180A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 410µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17640 pF @ 25 V Qualification: AEC-Q101 |
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IPB180P04P403ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -180A; 150W; PG-TO263-7 Type of transistor: P-MOSFET Technology: OptiMOS™ P2 Polarisation: unipolar Drain-source voltage: -40V Drain current: -180A Power dissipation: 150W Case: PG-TO263-7 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 0.19µC Kind of channel: enhancement |
Produkt ist nicht verfügbar |