| Anzahl | Preis |
|---|---|
| 1+ | 12.85 EUR |
| 10+ | 9.82 EUR |
| 25+ | 9.79 EUR |
| 100+ | 7.73 EUR |
| 250+ | 7.69 EUR |
| 500+ | 7.55 EUR |
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Technische Details IPB407N30NATMA1 Infineon Technologies
Description: MOSFET N-CH 300V 44A D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 4V @ 270µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 40.7mOhm @ 44A, 10V, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V.
Weitere Produktangebote IPB407N30NATMA1 nach Preis ab 7.29 EUR bis 15.58 EUR
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IPB407N30NATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 300V 44A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4V @ 270µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 40.7mOhm @ 44A, 10V Current - Continuous Drain (Id) @ 25°C: 44A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 841 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB407N30NATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 300V 44A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 300V 44A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 841 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 15.58 EUR |
| 10+ | 10.69 EUR |
| 100+ | 7.93 EUR |
| 500+ | 7.29 EUR |