IPB45P03P4L11ATMA2 Infineon Technologies

Description: MOSFET_(20V 40V) PG-TO263-3, Qualification: AEC-Q101, Grade: Automotive, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +5V, -16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 2V @ 85µA, Power Dissipation (Max): 58W (Tc), Rds On (Max) @ Id, Vgs: 10.8mOhm @ 45A, 10V.