IPB47N10SL-26 Infineon Technologies
Hersteller: Infineon Technologies
Description: IPB47N10 - 75V-100V N-CHANNEL AU
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 2mA
Power Dissipation (Max): 175W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
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Technische Details IPB47N10SL-26 Infineon Technologies
Description: IPB47N10 - 75V-100V N-CHANNEL AU, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 2V @ 2mA, Power Dissipation (Max): 175W (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 33A, 10V, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Bulk.
Weitere Produktangebote IPB47N10SL-26
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IPB47N10SL-26 | Infineon Technologies |
MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPB47N10SL-26 |
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Hersteller: Infineon Technologies
MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS
MOSFET N-Ch 100V 47A D2PAK-2 SIPMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


