IPB50R299CPATMA1 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 261+ | 2.5 EUR |
| 500+ | 2.23 EUR |
| 1000+ | 2 EUR |
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Technische Details IPB50R299CPATMA1 Infineon Technologies
Description: MOSFET N-CH 550V 12A TO263-3, Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Drain to Source Voltage (Vdss): 550 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 3.5V @ 440µA, Power Dissipation (Max): 104W (Tc), Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPB50R299CPATMA1 nach Preis ab 1.75 EUR bis 2.64 EUR
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IPB50R299CPATMA1 | Infineon Technologies |
 Trans MOSFET N-CH 550V 12A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 8450 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB50R299CPATMA1 | Infineon Technologies |
Trans MOSFET N-CH 550V 12A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 50165 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB50R299CPATMA1 | Infineon Technologies |
Description: MOSFET N-CH 550V 12A TO263-3 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V |
auf Bestellung 65886 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB50R299CPATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 550V 12A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 550V 12A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 8450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 261+ | 2.5 EUR |
| 500+ | 2.23 EUR |
| 1000+ | 2 EUR |
| IPB50R299CPATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 550V 12A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 550V 12A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 50165 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 261+ | 2.5 EUR |
| 500+ | 2.23 EUR |
| 1000+ | 2 EUR |
| 10000+ | 1.75 EUR |
| IPB50R299CPATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Description: MOSFET N-CH 550V 12A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
auf Bestellung 65886 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 209+ | 2.64 EUR |