IPB65R110CFDATMA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Technische Details IPB65R110CFDATMA2 Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO263-3, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 4.5V @ 1.3mA, Power Dissipation (Max): 277.8W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPB65R110CFDATMA2 nach Preis ab 4.63 EUR bis 11.48 EUR
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IPB65R110CFDATMA2 | Infineon Technologies |
Description: MOSFET N-CH 650V 31.2A TO263-3 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4.5V @ 1.3mA Power Dissipation (Max): 277.8W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 1213 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB65R110CFDATMA2 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 31.2A TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 650V 31.2A TO263-3
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
Power Dissipation (Max): 277.8W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 1213 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.48 EUR |
| 10+ | 7.69 EUR |
| 100+ | 5.54 EUR |
| 500+ | 4.63 EUR |