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IPB65R150CFDATMA2

IPB65R150CFDATMA2 Infineon Technologies

Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063 Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 22.4A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.74 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPB65R150CFDATMA2 Infineon Technologies

Description: MOSFET N-CH 650V 22.4A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V, Power Dissipation (Max): 195.3W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 900µA, Supplier Device Package: PG-TO263-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V.

Weitere Produktangebote IPB65R150CFDATMA2 nach Preis ab 2.83 EUR bis 7.08 EUR

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IPB65R150CFDATMA2 IPB65R150CFDATMA2 Hersteller : Infineon Technologies Infineon_IPX65R150CFD_DS_v02_00_en-1227316.pdf MOSFETs HIGH POWER_LEGACY
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.69 EUR
10+4.84 EUR
25+4.29 EUR
100+3.70 EUR
250+3.45 EUR
500+3.06 EUR
1000+2.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R150CFDATMA2 IPB65R150CFDATMA2 Hersteller : Infineon Technologies Infineon-IPX65R150CFD-DS-v02_00-en.pdf?fileId=db3a3043338c8ac80133ace218433063 Description: MOSFET N-CH 650V 22.4A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9.3A, 10V
Power Dissipation (Max): 195.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
auf Bestellung 1327 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.08 EUR
10+5.04 EUR
100+3.57 EUR
500+2.94 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH