IPB65R310CFDATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 11.4A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Anzahl | Preis |
|---|---|
| 188+ | 0.77 EUR |
| 191+ | 0.73 EUR |
| 194+ | 0.69 EUR |
| 198+ | 0.65 EUR |
| 250+ | 0.62 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.55 EUR |
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Technische Details IPB65R310CFDATMA1 Infineon Technologies
Description: MOSFET N-CH 650V 11.4A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V, Power Dissipation (Max): 104.2W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 400µA, Supplier Device Package: PG-TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V.
Weitere Produktangebote IPB65R310CFDATMA1 nach Preis ab 0.55 EUR bis 2.28 EUR
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IPB65R310CFDATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 11.4A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB65R310CFDATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 11.4A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB65R310CFDATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 11.4A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 13749 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB65R310CFDATMA1 | Hersteller : Infineon Technologies |
MOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2 |
auf Bestellung 1976 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB65R310CFDATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 11.4A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Power Dissipation (Max): 104.2W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPB65R310CFDATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 650V 11.4A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V Power Dissipation (Max): 104.2W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPB65R310CFDATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 11.4A Power dissipation: 104.2W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.31Ω Mounting: SMD Kind of channel: enhancement |
Produkt ist nicht verfügbar |