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IPB65R310CFDATMA2

IPB65R310CFDATMA2 Infineon Technologies

IPw65R310CFD_2_2.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432f91014f012f9c9d536d73fa
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO263-3
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Power Dissipation (Max): 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 607 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.42 EUR
10+2.85 EUR
100+1.97 EUR
500+1.63 EUR
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Technische Details IPB65R310CFDATMA2 Infineon Technologies

Description: MOSFET N-CH 650V 11.4A TO263-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 4.5V @ 400µA, Power Dissipation (Max): 104.2W (Tc), Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V.

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IPB65R310CFDATMA2 IPB65R310CFDATMA2 Infineon Technologies ds_ipx65r310cfd__2_3.pdf Trans MOSFET N-CH 650V 11.4A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R310CFDATMA2 IPB65R310CFDATMA2 Infineon Technologies IPw65R310CFD_2_2.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432f91014f012f9c9d536d73fa Description: MOSFET N-CH 650V 11.4A TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Power Dissipation (Max): 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R310CFDATMA2 IPB65R310CFDATMA2 Infineon Technologies Infineon_IPX65R310CFD_DS_v02_03_en_1.pdf MOSFETs LOW POWER_LEGACY
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R310CFDATMA2 ds_ipx65r310cfd__2_3.pdf
IPB65R310CFDATMA2
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 11.4A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R310CFDATMA2 IPw65R310CFD_2_2.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a30432f91014f012f9c9d536d73fa
IPB65R310CFDATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11.4A TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Power Dissipation (Max): 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB65R310CFDATMA2 Infineon_IPX65R310CFD_DS_v02_03_en_1.pdf
IPB65R310CFDATMA2
Hersteller: Infineon Technologies
MOSFETs LOW POWER_LEGACY
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH