IPB65R380C6ATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 278+ | 1.97 EUR |
| 500+ | 1.75 EUR |
| 1000+ | 1.58 EUR |
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Technische Details IPB65R380C6ATMA1 Infineon Technologies
Description: MOSFET N-CH 650V 10.6A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO263-3, Vgs(th) (Max) @ Id: 3.5V @ 320µA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPB65R380C6ATMA1 nach Preis ab 1.38 EUR bis 2.04 EUR
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IPB65R380C6ATMA1 | Infineon Technologies |
 Trans MOSFET N-CH 650V 10.6A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 11540 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB65R380C6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 10.6A D2PAK Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 3.5V @ 320µA Power Dissipation (Max): 83W (Tc) |
auf Bestellung 14860 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPB65R380C6ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 650V 10.6A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 650V 10.6A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 11540 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 278+ | 1.97 EUR |
| 500+ | 1.75 EUR |
| 1000+ | 1.58 EUR |
| 10000+ | 1.38 EUR |
| IPB65R380C6ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 10.6A D2PAK
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
Description: MOSFET N-CH 650V 10.6A D2PAK
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 83W (Tc)
auf Bestellung 14860 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 222+ | 2.04 EUR |