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IPB80N04S403ATMA1 Infineon Technologies

Name: IPB80N04S403ATMA1
Brand: Infineon Technologies
SKU: 6559969-3
Price: 19.60 EUR
Availability: InStock

Infineon-IPP_B_I80N04S4_03-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c53fc8b5dab&ack=t

Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 53µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
Qualification: AEC-Q101

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10+	2.53 EUR
100+	1.73 EUR
500+	1.39 EUR

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Technische Details IPB80N04S403ATMA1 Infineon Technologies

Description: MOSFET N-CH 40V 80A TO263-3-2, Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 4V @ 53µA, Power Dissipation (Max): 94W (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ).

Weitere Produktangebote IPB80N04S403ATMA1

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis
	IPB80N04S403ATMA1	Infineon Technologies	Description: MOSFET N-CH 40V 80A TO263-3-2 Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4V @ 53µA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ)	Produkt ist nicht verfügbar Benachrichtigung bei Verfügbarkeit	Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH

IPB80N04S403ATMA1

Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3-2
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 53µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)

Produkt ist nicht verfügbar

Mindestbestellmenge: 1000 Stücke

Im Einkaufswagen Stück im Wert von UAH