IPB80N04S4L04ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 40V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +20V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 661 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.66 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.27 EUR |
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Technische Details IPB80N04S4L04ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 35µA, Supplier Device Package: PG-TO263-3-2, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +20V, -16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPB80N04S4L04ATMA1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IPB80N04S4L04ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPB80N04S4L04ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 80 A, 0.0034 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS-T2 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0034ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 2243 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB80N04S4L04ATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPB80N04S4L04ATMA1 - Leistungs-MOSFET, n-Kanal, 40 V, 80 A, 0.0034 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 80A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 71W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS-T2 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0034ohm SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 2243 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB80N04S4L04ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IPB80N04S4L04ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 80A TO263-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 80A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +20V, -16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |