Produkte > INFINEON TECHNOLOGIES > IPB80N06S2LH5ATMA4
IPB80N06S2LH5ATMA4

IPB80N06S2LH5ATMA4 Infineon Technologies


IPB%2CIPP80N06S2L-H5.pdf Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2406 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
181+2.69 EUR
Mindestbestellmenge: 181
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IPB80N06S2LH5ATMA4 Infineon Technologies

Description: MOSFET N-CH 55V 80A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PG-TO263-3-2, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote IPB80N06S2LH5ATMA4 nach Preis ab 2.31 EUR bis 2.74 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IPB80N06S2LH5ATMA4 IPB80N06S2LH5ATMA4 Hersteller : Infineon Technologies ipp_b80n06s2l-h5_green.pdf Trans MOSFET N-CH 55V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 955 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+2.74 EUR
500+2.54 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N06S2LH5ATMA4 IPB80N06S2LH5ATMA4 Hersteller : Infineon Technologies ipp_b80n06s2l-h5_green.pdf Trans MOSFET N-CH 55V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 8750 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+2.74 EUR
500+2.54 EUR
1000+2.31 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N06S2LH5ATMA4 IPB80N06S2LH5ATMA4 Hersteller : Infineon Technologies ipp_b80n06s2l-h5_green.pdf Trans MOSFET N-CH 55V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 1451 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+2.74 EUR
500+2.54 EUR
1000+2.31 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N06S2LH5ATMA4 IPB80N06S2LH5ATMA4 Hersteller : Infineon Technologies ipp_b80n06s2l-h5_green.pdf Trans MOSFET N-CH 55V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N06S2LH5ATMA4 IPB80N06S2LH5ATMA4 Hersteller : Infineon Technologies IPB%2CIPP80N06S2L-H5.pdf Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N06S2LH5ATMA4 IPB80N06S2LH5ATMA4 Hersteller : Infineon Technologies Infineon-IPP_B80N06S2L_H5-DS-v01_00-en-1731869.pdf MOSFETs MOSFET_)40V 60V)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH