IPB80N06S4L05ATMA2 Infineon Technologies

Description: MOSFET_)40V,60V), Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 2.2V @ 60µA, Power Dissipation (Max): 107W (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Bulk.