IPB80P03P405ATMA1 Infineon Technologies

Description: MOSFET P-CH 30V 80A TO263-3, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO263-3-2, Vgs(th) (Max) @ Id: 4V @ 253µA, Power Dissipation (Max): 137W (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V.