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IPBE65R230CFD7AATMA1

IPBE65R230CFD7AATMA1 Infineon Technologies

Infineon-IPBE65R230CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33cb5727c93 Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 1555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.56 EUR
10+3.86 EUR
100+2.80 EUR
500+2.24 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPBE65R230CFD7AATMA1 Infineon Technologies

Description: MOSFET N-CH 650V 11A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 260µA, Supplier Device Package: PG-TO263-7-3-10, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V, Qualification: AEC-Q101.

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IPBE65R230CFD7AATMA1 IPBE65R230CFD7AATMA1 Hersteller : Infineon Technologies Infineon_IPBE65R230CFD7A_DataSheet_v02_02_EN-3362578.pdf MOSFETs AUTOMOTIVE_COOLMOS
auf Bestellung 984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.61 EUR
10+4.07 EUR
25+3.63 EUR
100+2.94 EUR
250+2.89 EUR
500+2.43 EUR
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IPBE65R230CFD7AATMA1 IPBE65R230CFD7AATMA1 Hersteller : Infineon Technologies ipbe65r230cfd7aatma1.pdf N-channel Automotive SJ Power MOSFET
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Im Einkaufswagen  Stück im Wert von  UAH
IPBE65R230CFD7AATMA1 IPBE65R230CFD7AATMA1 Hersteller : Infineon Technologies Infineon-IPBE65R230CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33cb5727c93 Description: MOSFET N-CH 650V 11A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 5.2A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1044 pF @ 400 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH