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Technische Details IPC100N04S5L-1R5 Infineon / IR
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8, Transistor: N-MOSFET, Technology: OptiMOS™ 5, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 100A, Power dissipation: 115W, Case: PG-TDSON-8, Gate-source voltage: ±16V, On-state resistance: 1.5mΩ, Mounting: SMD, Gate charge: 95nC, Kind of channel: enhancement.
Weitere Produktangebote IPC100N04S5L-1R5
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IPC100N04S5L-1R5 | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8 Transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 115W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 95nC Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPC100N04S5L-1R5 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH