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IPC100N04S5L-1R5

IPC100N04S5L-1R5 INFINEON TECHNOLOGIES


pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5D5ED457274A&compId=IPC100N04S5L1R5.pdf?ci_sign=fc50b98bc7916b1e7b88e330071377b25f0f81f2 Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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Technische Details IPC100N04S5L-1R5 INFINEON TECHNOLOGIES

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8, Type of transistor: N-MOSFET, Technology: OptiMOS™ 5, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 100A, Power dissipation: 115W, Case: PG-TDSON-8, Gate-source voltage: ±16V, On-state resistance: 1.5mΩ, Mounting: SMD, Gate charge: 95nC, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.

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IPC100N04S5L-1R5 IPC100N04S5L-1R5 Hersteller : INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1EE7AABA5D5ED457274A&compId=IPC100N04S5L1R5.pdf?ci_sign=fc50b98bc7916b1e7b88e330071377b25f0f81f2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 115W
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH