IPC60N04S4L06ATMA1 Infineon Technologies

Description: MOSFET N-CH 40V 60A TDSON-8-23, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TDSON-8-23, Vgs(th) (Max) @ Id: 2.2V @ 30µA, Power Dissipation (Max): 63W (Tc), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).