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Technische Details IPC70N04S5-4R6 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8, Polarisation: unipolar, Technology: OptiMOS™ 5, Type of transistor: N-MOSFET, Gate charge: 24.2nC, Mounting: SMD, On-state resistance: 4.6mΩ, Gate-source voltage: ±20V, Drain-source voltage: 40V, Power dissipation: 50W, Drain current: 70A, Kind of channel: enhancement, Case: PG-TDSON-8.
Weitere Produktangebote IPC70N04S5-4R6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IPC70N04S5-4R6 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8 Polarisation: unipolar Technology: OptiMOS™ 5 Type of transistor: N-MOSFET Gate charge: 24.2nC Mounting: SMD On-state resistance: 4.6mΩ Gate-source voltage: ±20V Drain-source voltage: 40V Power dissipation: 50W Drain current: 70A Kind of channel: enhancement Case: PG-TDSON-8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPC70N04S5-4R6 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Polarisation: unipolar
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Gate charge: 24.2nC
Mounting: SMD
On-state resistance: 4.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 50W
Drain current: 70A
Kind of channel: enhancement
Case: PG-TDSON-8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 70A; 50W; PG-TDSON-8
Polarisation: unipolar
Technology: OptiMOS™ 5
Type of transistor: N-MOSFET
Gate charge: 24.2nC
Mounting: SMD
On-state resistance: 4.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 50W
Drain current: 70A
Kind of channel: enhancement
Case: PG-TDSON-8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH