Technische Details IPC90N04S5L-3R3 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Case: PG-TDSON-8, Gate-source voltage: ±16V, On-state resistance: 3.3mΩ, Mounting: SMD, Kind of channel: enhancement, Technology: OptiMOS™ 5, Gate charge: 40nC, Drain current: 90A, Power dissipation: 62W.
Weitere Produktangebote IPC90N04S5L-3R3
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IPC90N04S5L-3R3 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 3.3mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 5 Gate charge: 40nC Drain current: 90A Power dissipation: 62W |
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