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IPD036N04LGBTMA1

IPD036N04LGBTMA1 Infineon Technologies

IPD036N04L_rev1.0.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a6011643476a6505a5
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO252-3
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 2V @ 45µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V
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Technische Details IPD036N04LGBTMA1 Infineon Technologies

Description: MOSFET N-CH 40V 90A TO252-3, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 2V @ 45µA, Power Dissipation (Max): 94W (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V.

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IPD036N04LGBTMA1 IPD036N04LGBTMA1 Infineon Technologies IPD036N04L_rev1.0.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a6011643476a6505a5 Description: MOSFET N-CH 40V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD036N04LGBTMA1 IPD036N04LGBTMA1 Infineon Technologies Infineon-IPD036N04L-DS-v01_00-en-1731783.pdf MOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD036N04LGBTMA1 IPD036N04L_rev1.0.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a6011643476a6505a5
IPD036N04LGBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2V @ 45µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD036N04LGBTMA1 Infineon-IPD036N04L-DS-v01_00-en-1731783.pdf
IPD036N04LGBTMA1
Hersteller: Infineon Technologies
MOSFET N-Ch 40V 90A DPAK-2 OptiMOS 3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH