IPD038N04NGBTMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 45µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
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Technische Details IPD038N04NGBTMA1 Infineon Technologies
Description: MOSFET N-CH 40V 90A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 4V @ 45µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V.
Weitere Produktangebote IPD038N04NGBTMA1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IPD038N04NGBTMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 90A TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 4V @ 45µA Power Dissipation (Max): 94W (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPD038N04NGBTMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 45µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Description: MOSFET N-CH 40V 90A TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 45µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH