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IPD048N06L3GATMA1

IPD048N06L3GATMA1 Infineon Technologies

Infineon-IPD048N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b4f496e4db0
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.98 EUR
5000+0.91 EUR
7500+0.88 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPD048N06L3GATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 90A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 58µA, Supplier Device Package: PG-TO252-3-311, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V.

Weitere Produktangebote IPD048N06L3GATMA1 nach Preis ab 0.83 EUR bis 3.52 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPD048N06L3GATMA1 IPD048N06L3GATMA1 Infineon Technologies Infineon_IPD048N06L3_DS_v02_00_en.pdf MOSFETs IFX FET 60V
auf Bestellung 5144 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.99 EUR
10+1.9 EUR
100+1.28 EUR
500+1.01 EUR
1000+0.92 EUR
2500+0.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPD048N06L3GATMA1 IPD048N06L3GATMA1 Infineon Technologies Infineon-IPD048N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b4f496e4db0 Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
auf Bestellung 8824 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.52 EUR
10+2.24 EUR
100+1.51 EUR
500+1.19 EUR
1000+1.09 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD048N06L3GATMA1 Infineon Technologies Infineon-IPD048N06L3-DS-v02_00-en.pdf N-канальний ПТ, Udss, В = 60, Id = 90 А, Ciss, пФ @ Uds, В = 8400 @ 30, Qg, нКл = 50, Rds = 4,8 мОм, Ugs(th) = 2,2 В, Р, Вт = 115, Тексп, °C = -55...+175, Тип монт. = SMD,... Транзистори Корпус: TO-252-3 Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
verfügbar 55 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
IPD048N06L3GATMA1 Infineon_IPD048N06L3_DS_v02_00_en.pdf
IPD048N06L3GATMA1
Hersteller: Infineon Technologies
MOSFETs IFX FET 60V
auf Bestellung 5144 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+2.99 EUR
10+1.9 EUR
100+1.28 EUR
500+1.01 EUR
1000+0.92 EUR
2500+0.83 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPD048N06L3GATMA1 Infineon-IPD048N06L3-DS-v02_00-en.pdf?fileId=db3a30431ddc9372011e2b4f496e4db0
IPD048N06L3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 90A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 58µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V
auf Bestellung 8824 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.52 EUR
10+2.24 EUR
100+1.51 EUR
500+1.19 EUR
1000+1.09 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD048N06L3GATMA1 Infineon-IPD048N06L3-DS-v02_00-en.pdf
Hersteller: Infineon Technologies
N-канальний ПТ, Udss, В = 60, Id = 90 А, Ciss, пФ @ Uds, В = 8400 @ 30, Qg, нКл = 50, Rds = 4,8 мОм, Ugs(th) = 2,2 В, Р, Вт = 115, Тексп, °C = -55...+175, Тип монт. = SMD,... Транзистори Корпус: TO-252-3 Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
verfügbar 55 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH