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IPD068N10N3GATMA1 Infineon Technologies


Infineon-IPD068N10N3G-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1eb7aeb615d1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 90A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+1.26 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPD068N10N3GATMA1 Infineon Technologies

Description: MOSFET N-CH 100V 90A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 3.5V @ 90µA, Power Dissipation (Max): 150W (Tc), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Weitere Produktangebote IPD068N10N3GATMA1 nach Preis ab 1.46 EUR bis 3.26 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPD068N10N3GATMA1 IPD068N10N3GATMA1 Infineon Technologies Infineon-IPD068N10N3G-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1eb7aeb615d1 Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
auf Bestellung 8128 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.81 EUR
12+1.56 EUR
100+1.54 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD068N10N3GATMA1 IPD068N10N3GATMA1 Infineon Technologies Infineon_IPD068N10N3G_DS_v02_02_en.pdf MOSFETs IFX FET >80 - 100V
auf Bestellung 32965 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.26 EUR
10+2.27 EUR
100+1.62 EUR
500+1.46 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPD068N10N3GATMA1 Infineon-IPD068N10N3G-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1eb7aeb615d1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
auf Bestellung 8128 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.81 EUR
12+1.56 EUR
100+1.54 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD068N10N3GATMA1 Infineon_IPD068N10N3G_DS_v02_02_en.pdf
Hersteller: Infineon Technologies
MOSFETs IFX FET >80 - 100V
auf Bestellung 32965 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.26 EUR
10+2.27 EUR
100+1.62 EUR
500+1.46 EUR
Im Einkaufswagen  Stück im Wert von  UAH