Technische Details IPD079N06L3GATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V, Power Dissipation (Max): 79W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 34µA, Supplier Device Package: PG-TO252-3-311, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V.
Weitere Produktangebote IPD079N06L3GATMA1 nach Preis ab 0.74 EUR bis 3.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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IPD079N06L3GATMA1 | Infineon Technologies |
 Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD079N06L3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 50A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 34µA Supplier Device Package: PG-TO252-3-311 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD079N06L3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD079N06L3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD079N06L3GATMA1 | Infineon Technologies |
MOSFETs IFX FET 60V |
auf Bestellung 4634 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD079N06L3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 50A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 34µA Supplier Device Package: PG-TO252-3-311 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V |
auf Bestellung 8026 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD079N06L3GATMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.77 EUR |
| IPD079N06L3GATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.09 EUR |
| 7500+ | 0.99 EUR |
| IPD079N06L3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 71+ | 2.48 EUR |
| 102+ | 1.65 EUR |
| 144+ | 1.12 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.74 EUR |
| IPD079N06L3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 70+ | 2.49 EUR |
| 101+ | 1.7 EUR |
| 143+ | 1.18 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.81 EUR |
| IPD079N06L3GATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs IFX FET 60V
MOSFETs IFX FET 60V
auf Bestellung 4634 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.81 EUR |
| 10+ | 2.45 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.2 EUR |
| 2500+ | 1.07 EUR |
| IPD079N06L3GATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 8026 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.88 EUR |
| 10+ | 2.49 EUR |
| 50+ | 1.87 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.33 EUR |