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IPD09N03LBG infineon



Hersteller: infineon
07+ to-252/d-pak
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Lieferzeit 21-28 Tag (e)
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Technische Details IPD09N03LBG infineon

Description: MOSFET N-CH 30V 50A TO252-3, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO252-3-11, Vgs(th) (Max) @ Id: 2V @ 20µA, Power Dissipation (Max): 58W (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount.

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IPD09N03LB G IPD09N03LB G Infineon Technologies ipd09n03lb_v1.54_g.pdf Description: MOSFET N-CH 30V 50A TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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IPD09N03LBG IPD09N03LBG Infineon Technologies MOSFET N-Channel MOSFET 20-200V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD09N03LB G ipd09n03lb_v1.54_g.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 2V @ 20µA
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD09N03LBG
Hersteller: Infineon Technologies
MOSFET N-Channel MOSFET 20-200V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH