IPD100N04S402ATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
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Technische Details IPD100N04S402ATMA1 Infineon Technologies
Description: MOSFET N-CH 40V 100A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 95µA, Supplier Device Package: PG-TO252-3-313, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9430 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote IPD100N04S402ATMA1 nach Preis ab 0.93 EUR bis 3.94 EUR
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IPD100N04S402ATMA1 | Infineon Technologies |
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD100N04S402ATMA1 | Infineon Technologies |
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD100N04S402ATMA1 | Infineon Technologies |
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 80000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD100N04S402ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 100A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 95µA Supplier Device Package: PG-TO252-3-313 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9430 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1676 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD100N04S402ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; N; 40V; 100A; Idm: 100A; 150W; DPAK Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 100A Power dissipation: 150W Case: DPAK Gate-source voltage: 20V Mounting: SMD Gate charge: 118nC Kind of channel: enhancement Application: automotive industry |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD100N04S402ATMA1 | Infineon |
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auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPD100N04S402ATMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.99 EUR |
| 5000+ | 0.95 EUR |
| IPD100N04S402ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.99 EUR |
| 5000+ | 0.93 EUR |
| IPD100N04S402ATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 80000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 318+ | 1.73 EUR |
| 500+ | 1.53 EUR |
| 1000+ | 1.38 EUR |
| 10000+ | 1.21 EUR |
| IPD100N04S402ATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 100A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9430 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1676 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.94 EUR |
| 10+ | 2.53 EUR |
| 100+ | 1.73 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.27 EUR |
| IPD100N04S402ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 100A; Idm: 100A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 100A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 100A; Idm: 100A; 150W; DPAK
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 100A
Power dissipation: 150W
Case: DPAK
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 118nC
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.04 EUR |
| IPD100N04S402ATMA1 |
|
Hersteller: Infineon
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)