IPD12CN10NGATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 67A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 83µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 67A, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details IPD12CN10NGATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 67A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 4V @ 83µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 12.4mOhm @ 67A, 10V, Current - Continuous Drain (Id) @ 25°C: 67A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPD12CN10NGATMA1 nach Preis ab 1.12 EUR bis 3.06 EUR
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IPD12CN10NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3 Technology: OptiMOS™ 2 On-state resistance: 12.4mΩ Power dissipation: 125W Gate-source voltage: ±20V Drain current: 67A Drain-source voltage: 100V Polarisation: unipolar Case: PG-TO252-3 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD |
auf Bestellung 1484 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD12CN10NGATMA1 | Infineon Technologies |
MOSFETs TRENCH >=100V |
auf Bestellung 1189 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD12CN10NGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 67A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 67A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 83µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 50 V |
auf Bestellung 7137 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD12CN10NGATMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Technology: OptiMOS™ 2
On-state resistance: 12.4mΩ
Power dissipation: 125W
Gate-source voltage: ±20V
Drain current: 67A
Drain-source voltage: 100V
Polarisation: unipolar
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 67A; 125W; PG-TO252-3
Technology: OptiMOS™ 2
On-state resistance: 12.4mΩ
Power dissipation: 125W
Gate-source voltage: ±20V
Drain current: 67A
Drain-source voltage: 100V
Polarisation: unipolar
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
auf Bestellung 1484 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 35+ | 2.1 EUR |
| 37+ | 1.97 EUR |
| 46+ | 1.57 EUR |
| 52+ | 1.4 EUR |
| 60+ | 1.2 EUR |
| 100+ | 1.16 EUR |
| IPD12CN10NGATMA1 |
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Hersteller: Infineon Technologies
MOSFETs TRENCH >=100V
MOSFETs TRENCH >=100V
auf Bestellung 1189 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.89 EUR |
| 10+ | 2.08 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.15 EUR |
| IPD12CN10NGATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 67A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 67A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 50 V
Description: MOSFET N-CH 100V 67A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 67A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 50 V
auf Bestellung 7137 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.06 EUR |
| 10+ | 2.07 EUR |
| 100+ | 1.47 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.12 EUR |