Technische Details IPD180N10N3GATMA1 Infineon Technologies
Description: MOSFET N-CH 100V 43A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V, Power Dissipation (Max): 71W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 33µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V.
Weitere Produktangebote IPD180N10N3GATMA1 nach Preis ab 0.83 EUR bis 3.44 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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IPD180N10N3GATMA1 | Infineon Technologies |
 Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD180N10N3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD180N10N3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD180N10N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 43A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 33µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD180N10N3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 17500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD180N10N3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1893 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD180N10N3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1893 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD180N10N3GATMA1 | Infineon Technologies |
MOSFETs MV POWER MOS |
auf Bestellung 6571 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD180N10N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 43A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 33µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V |
auf Bestellung 3030 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD180N10N3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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IPD180N10N3GATMA1 | Infineon Technologies |
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 18 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPD180N10N3GATMA1 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.86 EUR |
| IPD180N10N3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.93 EUR |
| IPD180N10N3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.93 EUR |
| IPD180N10N3GATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 43A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Description: MOSFET N-CH 100V 43A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.95 EUR |
| IPD180N10N3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.01 EUR |
| 10000+ | 0.92 EUR |
| 15000+ | 0.83 EUR |
| IPD180N10N3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1893 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 2.65 EUR |
| 116+ | 1.48 EUR |
| 132+ | 1.26 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.9 EUR |
| IPD180N10N3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1893 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 65+ | 2.65 EUR |
| 116+ | 1.44 EUR |
| 132+ | 1.21 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.83 EUR |
| IPD180N10N3GATMA1 |
|
Hersteller: Infineon Technologies
MOSFETs MV POWER MOS
MOSFETs MV POWER MOS
auf Bestellung 6571 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.37 EUR |
| 10+ | 1.58 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 1.01 EUR |
| 2500+ | 0.9 EUR |
| IPD180N10N3GATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 43A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
Description: MOSFET N-CH 100V 43A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V
auf Bestellung 3030 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.44 EUR |
| 10+ | 2.18 EUR |
| 50+ | 1.63 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.15 EUR |
| IPD180N10N3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| IPD180N10N3GATMA1 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 100V 43A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)