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IPD25DP06NMATMA1

IPD25DP06NMATMA1 Infineon Technologies

Infineon-IPD25DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a06677c9e724c Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 6.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
auf Bestellung 595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
16+1.11 EUR
100+0.73 EUR
500+0.57 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPD25DP06NMATMA1 Infineon Technologies

Description: MOSFET P-CH 60V 6.5A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-TO252-3-313, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V.

Weitere Produktangebote IPD25DP06NMATMA1 nach Preis ab 0.43 EUR bis 1.87 EUR

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IPD25DP06NMATMA1 IPD25DP06NMATMA1 Hersteller : Infineon Technologies Infineon_IPD25DP06NM_DS_v02_00_EN.pdf MOSFETs IFX FET > 60-80V
auf Bestellung 1986 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.87 EUR
10+1.16 EUR
100+0.76 EUR
500+0.59 EUR
1000+0.58 EUR
2500+0.46 EUR
5000+0.43 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
IPD25DP06NMATMA1 IPD25DP06NMATMA1 Hersteller : Infineon Technologies Infineon-IPD25DP06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a06677c9e724c Description: MOSFET P-CH 60V 6.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
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Im Einkaufswagen  Stück im Wert von  UAH