IPD30N03S2L20ATMA1 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 2+ | 2.48 EUR |
| 10+ | 1.56 EUR |
| 100+ | 1.03 EUR |
| 500+ | 0.93 EUR |
| 5000+ | 0.71 EUR |
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Technische Details IPD30N03S2L20ATMA1 Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-31, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 2V @ 23µA, Supplier Device Package: PG-TO252-3-11, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V.
Weitere Produktangebote IPD30N03S2L20ATMA1 nach Preis ab 1.07 EUR bis 2.53 EUR
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IPD30N03S2L20ATMA1 | Infineon Technologies |
 Description: MOSFET N-CH 30V 30A TO252-31Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 23µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V |
auf Bestellung 283 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD30N03S2L20ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Description: MOSFET N-CH 30V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 18A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 23µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
auf Bestellung 283 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.53 EUR |
| 12+ | 1.6 EUR |
| 100+ | 1.07 EUR |