IPD30N06S215ATMA2 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
| Anzahl | Privatkunde |
|---|---|
| 151+ | 1.18 EUR |
| 152+ | 1.15 EUR |
| 160+ | 1.07 EUR |
| 250+ | 1.04 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 1 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
151 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD30N06S215ATMA2 Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 4V @ 80µA, Supplier Device Package: PG-TO252-3-11, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote IPD30N06S215ATMA2 nach Preis ab 0.86 EUR bis 4.36 EUR
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IPD30N06S215ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 55V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1940 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD30N06S215ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 30A TO252-31 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD30N06S215ATMA2 | Infineon Technologies |
Trans MOSFET N-CH 55V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 7380 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD30N06S215ATMA2 | Infineon Technologies |
MOSFETs MOSFET_)40V 60V) |
auf Bestellung 1877 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD30N06S215ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 55V 30A TO252-31 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 80µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 5950 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD30N06S215ATMA2 |
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Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 55V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1940 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 145+ | 1.24 EUR |
| 151+ | 1.14 EUR |
| 152+ | 1.09 EUR |
| 160+ | 1 EUR |
| 250+ | 0.94 EUR |
| 500+ | 0.9 EUR |
| 1000+ | 0.86 EUR |
| IPD30N06S215ATMA2 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.25 EUR |
| IPD30N06S215ATMA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 55V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
auf Bestellung 7380 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 140+ | 1.27 EUR |
| 142+ | 1.24 EUR |
| 148+ | 1.17 EUR |
| IPD30N06S215ATMA2 |
|
Hersteller: Infineon Technologies
MOSFETs MOSFET_)40V 60V)
MOSFETs MOSFET_)40V 60V)
auf Bestellung 1877 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.97 EUR |
| 10+ | 2.07 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.42 EUR |
| 1000+ | 1.36 EUR |
| 2500+ | 1.26 EUR |
| IPD30N06S215ATMA2 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.36 EUR |
| 10+ | 2.78 EUR |
| 50+ | 2.11 EUR |
| 100+ | 1.89 EUR |
| 500+ | 1.51 EUR |