IPD30N06S2L23 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 55V 30A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
| Anzahl | Privatkunde |
|---|---|
| 67+ | 2.62 EUR |
| 100+ | 2.46 EUR |
| 250+ | 2.31 EUR |
| 500+ | 2.18 EUR |
| 1000+ | 2.08 EUR |
| 2500+ | 1.99 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
67 Stücke
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Technische Details IPD30N06S2L23 Infineon Technologies
Description: IPD30N06 - 55V-60V N-CHANNEL AUT, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TO252-3-11, Vgs(th) (Max) @ Id: 2V @ 50µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V.
Weitere Produktangebote IPD30N06S2L23
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IPD30N06S2L-23 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 55V; 30A; 100W; PG-TO252-3-11 Type of transistor: N-MOSFET Technology: OptiMOS™ Drain-source voltage: 55V Drain current: 30A Power dissipation: 100W Case: PG-TO252-3-11 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 42nC Application: automotive industry |
auf Bestellung 2442 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 41 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IPD30N06S2L-23 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 30A; 100W; PG-TO252-3-11
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 100W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 42nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 55V; 30A; 100W; PG-TO252-3-11
Type of transistor: N-MOSFET
Technology: OptiMOS™
Drain-source voltage: 55V
Drain current: 30A
Power dissipation: 100W
Case: PG-TO252-3-11
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 42nC
Application: automotive industry
auf Bestellung 2442 Stücke:
Lieferzeit 14-21 Tag (e)