IPD30N06S2L23 Infineon Technologies

Description: IPD30N06 - 55V-60V N-CHANNEL AUT, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PG-TO252-3-11, Vgs(th) (Max) @ Id: 2V @ 50µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V.