IPD40DP06NMATMA1 Infineon Technologies

Description: MOSFET P-CH 60V 4.3A TO252-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PG-TO252-3-313, Vgs(th) (Max) @ Id: 4V @ 166µA, Power Dissipation (Max): 19W (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 4.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63.