IPD50N06S4L12ATMA1 Infineon Technologies

Description: MOSFET N-CH 60V 50A TO252-3-11, Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Discontinued at Digi-Key, Supplier Device Package: PG-TO252-3-11, Vgs(th) (Max) @ Id: 2.2V @ 20µA, Power Dissipation (Max): 50W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ).