IPD50N10S3L-16 Infineon Technologies
Hersteller: Infineon Technologies
Trans MOSFET N-CH 100V 50A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
| Anzahl | Privatkunde |
|---|---|
| 78+ | 2.21 EUR |
| 100+ | 2.08 EUR |
| 250+ | 1.95 EUR |
| 500+ | 1.84 EUR |
| 1000+ | 1.76 EUR |
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Technische Details IPD50N10S3L-16 Infineon Technologies
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; 100V; 50A; 100W; DPAK3; automotive industry, Application: automotive industry, Drain current: 50A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Case: DPAK3, On-state resistance: 15mΩ, Mounting: SMD, Power dissipation: 100W, Gate charge: 49nC.
Weitere Produktangebote IPD50N10S3L-16 nach Preis ab 1.46 EUR bis 5.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IPD50N10S3L-16 | Infineon Technologies |
MOSFETs N-Ch 100V 50A DPAK-2 OptiMOS-T |
auf Bestellung 4330 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD50N10S3L-16 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 100V; 50A; 100W; DPAK3; automotive industry Application: automotive industry Drain current: 50A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: DPAK3 On-state resistance: 15mΩ Mounting: SMD Power dissipation: 100W Gate charge: 49nC |
auf Bestellung 1867 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD50N10S3L-16 | Infineon |
auf Bestellung 627500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPD50N10S3L-16 |
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Hersteller: Infineon Technologies
MOSFETs N-Ch 100V 50A DPAK-2 OptiMOS-T
MOSFETs N-Ch 100V 50A DPAK-2 OptiMOS-T
auf Bestellung 4330 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.46 EUR |
| 10+ | 3.53 EUR |
| 100+ | 2.43 EUR |
| 500+ | 2.12 EUR |
| 2500+ | 1.77 EUR |
| IPD50N10S3L-16 |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 50A; 100W; DPAK3; automotive industry
Application: automotive industry
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: DPAK3
On-state resistance: 15mΩ
Mounting: SMD
Power dissipation: 100W
Gate charge: 49nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 100V; 50A; 100W; DPAK3; automotive industry
Application: automotive industry
Drain current: 50A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: DPAK3
On-state resistance: 15mΩ
Mounting: SMD
Power dissipation: 100W
Gate charge: 49nC
auf Bestellung 1867 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 43+ | 2.62 EUR |
| 50+ | 1.86 EUR |
| 100+ | 1.74 EUR |
| 300+ | 1.65 EUR |
| 500+ | 1.46 EUR |
| IPD50N10S3L-16 |
Hersteller: Infineon
auf Bestellung 627500 Stücke:
Lieferzeit 21-28 Tag (e)