Produkte > INFINEON TECHNOLOGIES > IPD50R380CEAUMA1

IPD50R380CEAUMA1 Infineon Technologies


Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 14.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.55 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IPD50R380CEAUMA1 Infineon Technologies

Description: MOSFET N-CH 500V 14.1A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V, Power Dissipation (Max): 98W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 260µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 13V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V.

Weitere Produktangebote IPD50R380CEAUMA1 nach Preis ab 0.62 EUR bis 5.03 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPD50R380CEAUMA1 IPD50R380CEAUMA1 Infineon Technologies Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38 Description: MOSFET N-CH 500V 14.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
auf Bestellung 17638 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.31 EUR
13+1.46 EUR
100+0.97 EUR
500+0.76 EUR
1000+0.7 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R380CEAUMA1 IPD50R380CEAUMA1 Infineon Technologies Infineon_IPD50R380CE_DS_v02_03_EN.pdf MOSFETs CONSUMER
auf Bestellung 3722 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.46 EUR
10+1.56 EUR
100+1.04 EUR
500+0.81 EUR
1000+0.74 EUR
2500+0.66 EUR
5000+0.62 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R380CEAUMA1 Infineon Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38 MOSFET, TO-252-3 Транзистори
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+5.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R380CEAUMA1 Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 14.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
auf Bestellung 17638 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.31 EUR
13+1.46 EUR
100+0.97 EUR
500+0.76 EUR
1000+0.7 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R380CEAUMA1 Infineon_IPD50R380CE_DS_v02_03_EN.pdf
Hersteller: Infineon Technologies
MOSFETs CONSUMER
auf Bestellung 3722 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.46 EUR
10+1.56 EUR
100+1.04 EUR
500+0.81 EUR
1000+0.74 EUR
2500+0.66 EUR
5000+0.62 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R380CEAUMA1 Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38
Hersteller: Infineon
MOSFET, TO-252-3 Транзистори
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1+5.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH