| Anzahl | Preis |
|---|---|
| 3+ | 0.98 EUR |
| 10+ | 0.87 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.42 EUR |
| 2500+ | 0.38 EUR |
| 5000+ | 0.36 EUR |
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Technische Details IPD50R950CEAUMA1 Infineon Technologies
Description: CONSUMER, Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 13V, Supplier Device Package: PG-TO252-3-344, Vgs(th) (Max) @ Id: 3.5V @ 100µA, Power Dissipation (Max): 53W (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V, Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote IPD50R950CEAUMA1 nach Preis ab 0.38 EUR bis 1.02 EUR
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IPD50R950CEAUMA1 | Infineon Technologies |
 Description: CONSUMERDrain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 13V Supplier Device Package: PG-TO252-3-344 Vgs(th) (Max) @ Id: 3.5V @ 100µA Power Dissipation (Max): 53W (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V |
auf Bestellung 1214 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD50R950CEAUMA1 |
|
Hersteller: Infineon Technologies
Description: CONSUMER
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Supplier Device Package: PG-TO252-3-344
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Description: CONSUMER
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Supplier Device Package: PG-TO252-3-344
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
auf Bestellung 1214 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 1.02 EUR |
| 22+ | 0.8 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.38 EUR |