IPD60R2K0C6ATMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 600V 2.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.4 EUR |
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Technische Details IPD60R2K0C6ATMA1 Infineon Technologies
Description: MOSFET N-CH 600V 2.4A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V, Power Dissipation (Max): 22.3W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 60µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V.
Weitere Produktangebote IPD60R2K0C6ATMA1 nach Preis ab 0.38 EUR bis 1.41 EUR
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IPD60R2K0C6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 2.4A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R2K0C6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 2.4A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R2K0C6ATMA1 | Hersteller : Infineon Technologies |
MOSFETs LOW POWER_LEGACY |
auf Bestellung 3459 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R2K0C6ATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 2.4A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V Power Dissipation (Max): 22.3W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD60R2K0C6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 650V 2.4A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R2K0C6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 2.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD60R2K0C6ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 600V 2.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| IPD60R2K0C6ATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 1.5A; Idm: 6A; 22.3W; PG-TO252 Type of transistor: N-MOSFET Kind of channel: enhancement Polarisation: unipolar Mounting: SMD On-state resistance: 2Ω Drain current: 1.5A Pulsed drain current: 6A Power dissipation: 22.3W Gate-source voltage: ±20V Technology: CoolMOS™ C6 Drain-source voltage: 600V Case: PG-TO252 |
Produkt ist nicht verfügbar |