IPD60R360P7 Infineon Technologies

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 41W; PG-TO252-3; ESD, Type of transistor: N-MOSFET, On-state resistance: 0.36Ω, Mounting: SMD, Power dissipation: 41W, Gate charge: 13nC, Polarisation: unipolar, Version: ESD, Technology: CoolMOS™ P7, Drain current: 6A, Kind of channel: enhancement, Drain-source voltage: 600V, Gate-source voltage: ±20V, Case: PG-TO252-3.