IPD60R380E6ATMA2 Infineon Technologies
| Anzahl | Preis |
|---|---|
| 394+ | 1.39 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD60R380E6ATMA2 Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 300µA, Supplier Device Package: PG-TO252-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V.
Weitere Produktangebote IPD60R380E6ATMA2 nach Preis ab 1.11 EUR bis 1.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IPD60R380E6ATMA2 | Infineon Technologies |
 Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
IPD60R380E6ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 600V 10.6A TO252-3 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 300µA Supplier Device Package: PG-TO252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V |
auf Bestellung 6650 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IPD60R380E6ATMA2 |
|
Hersteller: Infineon Technologies
Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 600V 10.6A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 394+ | 1.39 EUR |
| 500+ | 1.24 EUR |
| 1000+ | 1.11 EUR |
| IPD60R380E6ATMA2 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Description: MOSFET N-CH 600V 10.6A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 6650 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 315+ | 1.42 EUR |