Weitere Produktangebote IPD60R3K3C6
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IPD60R3K3C6 | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 600V 1.7A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 500mA, 10V Power Dissipation (Max): 18.1W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPD60R3K3C6 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 600V 1.7A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 500mA, 10V Power Dissipation (Max): 18.1W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 40µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPD60R3K3C6 | Hersteller : Infineon Technologies |
MOSFET N-Ch 650V 1.7A DPAK-2 CoolMOS C6 |
Produkt ist nicht verfügbar |