IPD60R600CP Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 386+ | 1.69 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.36 EUR |
| 10000+ | 1.18 EUR |
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Technische Details IPD60R600CP Infineon Technologies
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 220µA, Supplier Device Package: PG-TO252-3-313, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V.
Weitere Produktangebote IPD60R600CP nach Preis ab 1.69 EUR bis 1.78 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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IPD60R600CP | ROCHESTER ELECTRONICS |
 Description: ROCHESTER ELECTRONICS - IPD60R600CP - IPD60R600 - 600V COOLMOS N-CHANNEL POWERtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD60R600CP | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 220µA Supplier Device Package: PG-TO252-3-313 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V |
auf Bestellung 4945 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| IPD60R600CP | INFINEON |
|
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IPD60R600CP |
|
Hersteller: ROCHESTER ELECTRONICS
Description: ROCHESTER ELECTRONICS - IPD60R600CP - IPD60R600 - 600V COOLMOS N-CHANNEL POWER
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
Description: ROCHESTER ELECTRONICS - IPD60R600CP - IPD60R600 - 600V COOLMOS N-CHANNEL POWER
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 435+ | 1.69 EUR |
| IPD60R600CP |
|
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 220µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
auf Bestellung 4945 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 308+ | 1.78 EUR |
| IPD60R600CP |
|
Hersteller: INFINEON
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)