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IPD65R250C6XTMA1

IPD65R250C6XTMA1 Infineon Technologies

DS_IPD65R250C6_2_1.pdf?folderId=db3a3043156fd5730115c736bcc70ff2&fileId=db3a3043337a914d013383668e4d609a
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 16.1A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 400µA
Power Dissipation (Max): 208.3W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 4.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details IPD65R250C6XTMA1 Infineon Technologies

Description: MOSFET N-CH 650V 16.1A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-TO252-3, Vgs(th) (Max) @ Id: 3.5V @ 400µA, Power Dissipation (Max): 208.3W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 4.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 16.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

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IPD65R250C6XTMA1 IPD65R250C6XTMA1 Infineon Technologies Infineon-IPD65R250C6-DS-v02_01-en-1227170.pdf MOSFET N-Ch 700V 16.1A DPAK-2
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IPD65R250C6XTMA1 IPD65R250C6XTMA1 INFINEON TECHNOLOGIES IPD65R250C6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Power dissipation: 208.3W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IPD65R250C6XTMA1 Infineon-IPD65R250C6-DS-v02_01-en-1227170.pdf
IPD65R250C6XTMA1
Hersteller: Infineon Technologies
MOSFET N-Ch 700V 16.1A DPAK-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD65R250C6XTMA1 IPD65R250C6-DTE.pdf
IPD65R250C6XTMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 16.1A; 208.3W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 16.1A
On-state resistance: 0.25Ω
Gate-source voltage: ±20V
Power dissipation: 208.3W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH